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Type: 
Journal
Description: 
We compare the luminescence from InAsN∕GaAs and InAsN∕GaAsN quantum dots with that obtained from InGaNAsN∕GaAs quantum wells grown in the same experimental system. All structures were engineered to emit near 1.3μm at room temperature. Quantum-dot emitters were found to exhibit higher thermal stability and did not require postgrowth annealing. The use of GaAsN barriers as opposed to GaAs barriers provided for narrower and more intense quantum-dot luminescence.
Publisher: 
American Institute of Physics
Publication date: 
6 Jun 2005
Authors: 

G Bais, A Cristofoli, F Jabeen, M Piccin, E Carlino, S Rubini, F Martelli, ALFONSO Franciosi

Biblio References: 
Volume: 86 Issue: 23 Pages: 233107
Origin: 
Applied Physics Letters