Al 2 O 3 films were grown by plasma enhanced-atomic layer deposition (PE-ALD) on 4H-SiC substrates, with and without the presence of a thin SiO 2 layer. The collected data indicated the formation of amorphous, adherent, and uniform Al 2 O 3 thin films with a thickness of about 30 nm. The electrical characterization has been performed on metal–oxide–semiconductor (MOS) structures by both capacitance–voltage (C–V) and current–voltage (I–V) measurements. All these analyses demonstrated a better dielectric behavior ...