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Type: 
Journal
Description: 
The channel mobility in SiO₂/GaN hybrid metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) has been studied. The formalism used for the inversion mobility in MOSFETs has been adapted to the case of GaN MOS-HEMTs, which operate in accumulation condition. Using the values of interface trapped charges (Qtrap= 1.35 x 10¹² cm⁻ ²) and surface roughness (RMS= 0.15 nm) determined by capacitance-voltage measurements and nanoscale morphological analyses allowed to derive ...
Publisher: 
IEEE
Publication date: 
15 May 2017
Authors: 

Patrick Fiorenza, Giuseppe Greco, Ferdinando Iucolano, Alfonso Patti, Fabrizio Roccaforte

Biblio References: 
Origin: 
IEEE Transactions on Electron Devices