-A A +A
Emerging non-volatile memory technologies are promising due to their anticipated capacity benefits, non-volatility, and zero idle energy. One of the most promising candidates is resistive random access memory (RRAM) based on resistive switching (RS). This paper reviews the development of RS device technology including the fundamental physics, material engineering, three-dimension (3D) integration, and bottom-up fabrication. The device operation, physical mechanisms for resistive switching, reliability metrics, and memory cell selector candidates are summarized from the recent advancement in both industry and academia. Options for 3D memory array architectures are presented for the mass storage application. Finally, the potential application of bottom-up fabrication approaches for effective manufacturing is introduced.
Springer US
Publication date: 
1 Dec 2017

Hong-Yu Chen, Stefano Brivio, Che-Chia Chang, Jacopo Frascaroli, Tuo-Hung Hou, Boris Hudec, Ming Liu, Hangbing Lv, Gabriel Molas, Joon Sohn, Sabina Spiga, V Mani Teja, Elisa Vianello, H-S Philip Wong

Biblio References: 
Volume: 39 Issue: 1-4 Pages: 21-38
Journal of Electroceramics