Experimental evidences and microscopic modelling of the mechanism of B diffusion in Si and Ge are given. In both the lattices B migrates by the mediation of self-interstitials (Is). In Si, B diffusion occurs mainly through the formation of a BI0 complex, after interactions of BS-with I0 or with I++ in intrinsic condition or high hole densities, respectively, followed by a proper charge exchange. A small contribution of the BI-complex is visible only under n-type doping, when BS-and I0 bind nonetheless the pairing of B with the n-dopants. Also in Ge, the B diffusion mechanism has been fixed, even if to a lower extent, revealing the need of self-interstitials to start the B motion. We evidenced the occurrence of the proton radiation enhanced diffusion (RED) and of the transient enhanced diffusion (TED) of B, modeling both the cases with the central role of Is.
The Electrochemical Society
1 Oct 2010
Volume: 33 Issue: 11 Pages: 167-178