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Type: 
Conference
Description: 
Threshold voltage (Vth) and drain-source current (IDS) behaviour of nitride read only memories (NROM) were studied both in situ during irradiation or after irradiation with photons and ions. Vth loss exhibits a variability well explained by the same Weibull statistics regardless of the irradiation species and total dose. Preliminary measurements of IDS in-situ during irradiation with photons show a step-like increase of the current with the total irradiation dose.
Publisher: 
Publication date: 
1 Jan 2012
Authors: 

S Libertino, D Corso, M Lisiansky, Y Roizin, F Palumbo, F Principato, C Pace, P Finocchiaro, S Lombardo

Biblio References: 
Origin: 
Nuclear and Space Radiation Effects Conference (NSREC)