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Type: 
Journal
Description: 
In this work, we present an experimental study on the single-electron effects observed at room temperature in silicon nanocrystal memories. The electrical characterization has been performed by means of a purposely designed low noise high bandwidth measurement system. Relevant statistical properties of the threshold voltage shifts induced by single-electron trapping and detrapping in the silicon dots are reported. The kinetics of electron capture and emission is also discussed
Publisher: 
Publication date: 
1 Jan 2005
Authors: 

C Pace, F Crupi, S Lombardo, C Gerardi, G Cocorullo

Biblio References: 
Volume: 87 Pages: 1-3
Origin: 
APPLIED PHYSICS LETTERS