We use a focussed laser beam to control the electronic activity of N-and H-atoms in a dilute nitride Ga (AsN)/GaAs quantum well. Our approach yields submicron resolution in the spatial manipulation of the electronic properties and can provide an alternative method to masking techniques for H-defect engineering and in-plane patterning of the band gap energy.© 2011 American Institute of Physics.
American Institute of Physics Publising LLC
1 Jan 2011
Volume: 99 Issue: 2
Applied Physics Letters