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Part 2-Chapter 5-Processing of SiC-5.1 Implantation and Doping of SiC-Correlation between Current Transport and Defects in n+/p 6H-SiC Diodes
Type:
Journal
Description:
Publisher:
Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-
Publication date:
1 Jan 2006
Authors:
M Castaldini, A
Canino
, A Moscatelli, F Cavallini, R
Poggi
, A
Nipoti
Biblio References:
Volume: 527529 Pages: 811-814
Origin:
Materials Science Forum
Link:
http://scholar.google.com/scholar?cluster=14071995319769909938&hl=en&oi=scholarr
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