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The working principle of a Phase Change Memory (PCM) cell exploits the repeated reversible transition between a crystalline and an amorphous phase of chalcogenide alloys typically Ge2Sb2Te5, that are characterized respectively by a high (SET) and a low (RESET) conductive state. The change in density between the two phases (6%) induces a very high compressive stress to the active amorphous region by the surrounding crystalline materials. Moreover, the physical iterative transformation between crystalline and amorphous phase transformation introduces a swelling and deswelling effect. This is one of the key failure mechanisms that are limiting the reliability of the final integration of the PCM system. Knowledge of the mechanical properties of the amorphous phase is then an important factor. Amorphous structure, i. e. its short-range order, depends on the adopted formation procedure. In this paper we …
Publication date: 
15 Dec 2018

G D'Arrigo, A Mio, G Favaro, M Calabretta, A Sitta, A Sciuto, M Russo, M Calì, M Oliveri, E Rimini

Biblio References: 
Volume: 355 Pages: 227-233
Surface and Coatings Technology