Point defect evolution in nonequilibrium conditions has attracted a broad interest in the past decades also due to the role played by the defects in the transient enhanced diffusion phenomena in Si. Such a huge research effort has produced a consistent scenario, elucidated by experimental and theoretical works, on the different stages diffusion, aggregate nucleation, formation, and annihilation of extended defects of defect supersaturation in Si at constant temperature. The defect kinetics in extremely far from equilibrium conditions nonuniform fast varying thermal field and phase transition, like those caused by a laser irradiation LI process in the melting regime, has been instead poorly investigated. Indeed, while the phase-transition kinetics, including the concurrent impurity segregation and redistribution, has been quite extensively investigated both …