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This chapter describes the operation of various forms of phase-change memristive devices and systems, evaluating their fundamental behaviour and outlines their possible advantages and disadvantages compared to more usual implementations. It introduces and demonstrates experimentally a new and simple approach to providing non-volatile logic operations, specifically AND and OR Boolean logic, using phase-change devices. Chalcogenide materials enables several novel device concepts, such as phase change memories (PCMs), optical disks and electronic threshold switches for high-current select devices in crossbar arrays. The chapter proposes an integrated, all-photonic memory employing phase-change materials in combination with silicon nitride waveguides. It shows that it is possible to have sub-nanosecond, high speed, multi-level memories in …
Wiley‐VCH Verlag GmbH & Co. KGaA
Publication date: 
19 Jun 2012

CD Wright, JA Vázquez Diosdado, L Wang, Y Liu, P Ashwin, KI Kohary, MM Aziz, P Hosseini, RJ Hicken, Marco Cassinerio, Nicola Ciocchini, Daniele Ielmini, Volker L Deringer, Marck Lumeij, Ralf Stoffel, Richard Dronskowski, Wolfram HP Pernice, Harish Bhaskaran, Martin Salinga, Martin Wimmer, Matthias Käs, Matthias Wuttig, G D'Arrigo, AM Mio, A Cattaneo, C Spinella, AL Lacaita, E Rimini, Manuel Bornhöfft, Andreas Kaldenbach, Joachim Mayer

Biblio References: 
Pages: 163-176
Frontiers in Electronic Materials: A Collection of Extended Abstracts of the Nature Conference Frontiers in Electronic Materials, June 17th to 20th 2012, Aachen, Germany