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Type: 
Journal
Description: 
We have investigated on the response of two porous silicon samples, n-type and p-type doped, to oxygen. Both the samples czhibit a quenching following the Stern-Wolmer mºdel. Time resºlved PL measurements have been also carried out in ºrder tº measure the carrier lifetime in absence of the quencher. The reactivity rate constant has been computed and it has been fºund to depend, for n-doped sample, on the characteristic nano-dimension of the emitting structure. This suggest that chemical reactivity is strictly correlated to the confinement size.
Publisher: 
World Scientific
Publication date: 
23 Jun 2005
Authors: 

GD FRANCIA, I REA, P MADDALENA, S LETTIERI

Biblio References: 
Pages: 159
Origin: 
Sensors And Microsystems-Proceedings Of The 9th Italian Conference