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The carbon vacancy (V C) is a major limiting-defect of minority carrier lifetime in n-type 4H-SiC epitaxial layers and it is readily formed during high temperature processing. In this study, a kinetics model is put forward to address the thermodynamic equilibration of V C, elucidating the possible atomistic mechanisms that control the V C equilibration under C-rich conditions. Frenkel pair generation, injection of carbon interstitials (C i’s) from the C-rich surface, followed by recombination with V C’s, and diffusion of V C’s towards the surface appear to be the major mechanisms involved. The modelling results show a close agreement with experimental deep-level transient spectroscopy (DLTS) depth profiles of V C after annealing at different temperatures.
Trans Tech Publications Ltd
Publication date: 
1 Jan 2018

Hussein M Ayedh, Roberta Nipoti, Anders Hallén, Bengt Gunnar Svensson

Biblio References: 
Volume: 924 Pages: 233-236
Materials Science Forum