-A A +A
Type: 
Conference
Description: 
Article PreviewArticle PreviewArticle PreviewStacking Faults (SFs) are the main defect of 3C-SiC material and in this work a detailed study of this typology of defect is presented. We studied the behavior of SFs with High Resolution XRD and STEM analysis. The homo-epitaxial growth was proposed as a solution for the reduction of SFs density in 3C-SiC material and the influence of the growth condition on the SFs density was studied. The knowledge of the mechanism of SFs reduction is crucial for the development of a high quality material for devices fabrication.
Publisher: 
Trans Tech Publications Ltd
Publication date: 
1 Jan 2018
Authors: 

Grazia Litrico, Ruggero Anzalone, Alessandra Alberti, Corrado Bongiorno, Giuseppe Nicotra, Massimo Zimbone, Marco Mauceri, Salvatore Coffa, Francesco La Via

Biblio References: 
Volume: 924 Pages: 124-127
Origin: 
Materials Science Forum