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Type: 
Conference
Description: 
A vertical 4H-SiC pin diode with 2× 10 20 cm-3 Al+ implanted emitter and 1950 C/5min post implantation annealing has been characterized by deep level transient spectroscopy (DLTS). Majority (electron) and minority (hole) carrier traps have been found. Electron traps with a homogeneous depth profile, are positioned at 0.16, 0.67 and 1.5 eV below the minimum edge of the conduction band, and have 3× 10-15, 1.7× 10 14, and 1.8× 10-14 cm 2 capture cross section, respectively. A hole trap decreasing in intensity with decreasing pulse voltage occurs at 0.35 eV above the maximum edge of the valence band with 1× 10 13 cm 2 apparent capture cross section. The highest density is observed for the refractory 0.67 eV electron trap that is due to the double negative acceptor states of the carbon vacancy.
Publisher: 
Trans Tech Publications Ltd
Publication date: 
1 Jan 2017
Authors: 

Hussein M Ayedh, Maurizio Puzzanghera, Bengt Gunnar Svensson, Roberta Nipoti

Biblio References: 
Volume: 897 Pages: 279-282
Origin: 
Materials Science Forum