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Type: 
Journal
Description: 
This paper presents the design, fabrication, and characterization of Schottky erbium/silicon photodetectors working at 1.55 µm. These erbium/silicon junctions are carefully characterized using both electric and optical measurements at room temperature. A Schottky barrier Φ B of~ 673 meV is extrapolated; the photodetectors show external responsivity of 0.55 mA/W at room temperature under an applied reverse bias of 8 V. In addition, the device performance is discussed in terms of normalized noise and noise-equivalent power. The proposed devices will pave the way towards the development of Er-based photodetectors and light sources to be monolithically integrated in the same silicon substrate, and both operating at 1.55 µm. View Full-Text
Publisher: 
Multidisciplinary Digital Publishing Institute
Publication date: 
1 Jan 2018
Authors: 
Biblio References: 
Volume: 18 Issue: 11 Pages: 3755
Origin: 
Sensors