-A A +A
Type: 
Conference
Description: 
This paper presents an ultra-low power, silicon-integrated readout for resonant MEMS strain sensors. The analogue readout implements a negative-resistance amplifier based on first-generation current conveyors (CCI) that, thanks to the reduced number of active elements, targets both low-power and low-noise. A prototype of the circuit was implemented in a 0.18-µm technology occupying less than 0.4 mm2 and consuming only 9 µA from the 1.8-V power supply. The prototype was earliest tested by connecting it to a resonant MEMS strain resonator.
Publisher: 
Publication date: 
1 Jan 2018
Authors: 

Marco Crescentini, Cinzia Tamburini, Luca Belsito, Aldo Romani, Alberto Roncaglia, Marco Tartagni

Biblio References: 
Volume: 2 Issue: 13 Pages: 973
Origin: 
Multidisciplinary Digital Publishing Institute Proceedings