Activation of surface segregated dopants above the solid solubility limit in a high Ge content SiGe substrate has been demonstrated by nanosecond melt UV laser anneal. This exceeds the activation possible with conventional solid-phase annealing technics. The segregation effects, strongly amplified by the phase changing of the partial melting of the sample during the annealing, play a key role explaining dopant profile redistribution in Si-Ge alloys and activation.