-A A +A
Type: 
Conference
Description: 
Article PreviewArticle PreviewArticle PreviewThe results of the first experiments for achieving the thermal equilibrium during 1300 C annealing of 1× 10 20 cm-3 ion implanted Al+ in 3C-SiC are shown. X-ray diffraction, through reciprocal space maps and 2Θ scans, characterizes the 3C-SiC lattice recovery. The achievement of a ohmic behavior of Ni/Al/Ti alloy indicates the onset of a measurable electrical activation of the Al implanted layer. The Al electrical activation is qualified through the implanted layer sheet resistance.
Publisher: 
Trans Tech Publications Ltd
Publication date: 
1 Jan 2019
Authors: 

Roberta Nipoti, Maria Concetta Canino, Filippo Bonafè, Frank Torregrosa, Sylvain Monnoye, Hugues Mank, Marcin Zielinski

Biblio References: 
Volume: 963 Pages: 420-423
Origin: 
Materials Science Forum