The results of the first experiments for achieving the thermal equilibrium during 1300 C annealing of 1× 10 20 cm-3 ion implanted Al+ in 3C-SiC are shown. X-ray diffraction, through reciprocal space maps and 2Θ scans, characterizes the 3C-SiC lattice recovery. The achievement of a ohmic behavior of Ni/Al/Ti alloy indicates the onset of a measurable electrical activation of the Al implanted layer. The Al electrical activation is qualified through the implanted layer sheet resistance.