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Type: 
Journal
Description: 
The 4H-SiC polytype has been here used as a benchmark to see that, in the case of ion implanted 1× 10 20 cm− 3 Al, a carrier transport in the implanted layer is measurable after 1350 C post implantation annealing, provided that the annealing time is sufficiently long. This opens the way to the possibility of studying the post implantation annealing of ion-implanted 3C-SiC/Si at temperatures that avoid the risk of melting the Si substrate. The post implantation annealing of 1× 10 20 cm− 3 Al+ ion implanted 3C-SiC/Si at 1300 C for annealing times in the range 90–546 h has been here performed. The results of Secondary Ion Mass spectrometry, Atomic Force Microscopy, Fourier Transform Infra-Red reflectance spectroscopy, X-Ray Diffraction spectroscopy, and current-voltage measurements by the transmission line method are presented and discussed.
Publisher: 
The Electrochemical Society
Publication date: 
1 Jan 2019
Authors: 

Roberta Nipoti, Mariaconcetta Canino, Marcin Zielinski, Frank Torregrosa, Alberto Carnera

Biblio References: 
Volume: 8 Issue: 9 Pages: P480-P487
Origin: 
ECS Journal of Solid State Science and Technology