The 4H-SiC polytype has been here used as a benchmark to see that, in the case of ion implanted 1× 10 20 cm− 3 Al, a carrier transport in the implanted layer is measurable after 1350 C post implantation annealing, provided that the annealing time is sufficiently long. This opens the way to the possibility of studying the post implantation annealing of ion-implanted 3C-SiC/Si at temperatures that avoid the risk of melting the Si substrate. The post implantation annealing of 1× 10 20 cm− 3 Al+ ion implanted 3C-SiC/Si at 1300 C for annealing times in the range 90–546 h has been here performed. The results of Secondary Ion Mass spectrometry, Atomic Force Microscopy, Fourier Transform Infra-Red reflectance spectroscopy, X-Ray Diffraction spectroscopy, and current-voltage measurements by the transmission line method are presented and discussed.