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In recent years, III-Nitrides have been intensively studied because of their great potential to be used in high-efficiency solid-state lighting, photovoltaics, and high power and temperature electronics. In particular, GaN and its alloys with In and Al are of interest due to the ability to tune the direct bandgap of these materials from near-ultraviolet to near-infrared region. However, planar growth of III-Nitrides on heterosubstrates is a challenge mostly due to a large lattice and thermal mismatch between the nitride film and the substrate. III-Nitride nanowires (NWs) have the potential to overcome the problems related to strain once they are grown on heterosubstrates due to their small interface area and high aspect ratio. In an effort to grow III-Nitride NWs, researchers have tried many growth techniques. Among them are the most prominent ones as metal-organic chemical-vapor-deposition and plasma-assisted molecular …
Woodhead Publishing
Publication date: 
1 Jan 2015

P Dogan, C Chèze, R Calarco

Biblio References: 
Pages: 125-145
Semiconductor Nanowires