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In recent years strain engineering is proposed in chalcogenide superlattices (SLs) to shape in particular the switching functionality for phase change memory applications. This is possible in Sb2Te3/GeTe heterostructures leveraging on the peculiar behavior of Sb2Te3, in between covalently bonded and weakly bonded materials. In the present study, the structural and thermoelectric (TE) properties of epitaxial Sb2+xTe3 films are shown, as they represent an intriguing option to expand the horizon of strain engineering in such SLs. Samples with composition between Sb2Te3 and Sb4Te3 are prepared by molecular beam epitaxy. A combination of X‐ray diffraction and Raman spectroscopy, together with dedicated simulations, allows unveiling the structural characteristics of the alloys. A consistent evaluation of the structural disorder characterizing the material is drawn as well as the presence of both Sb2 and Sb4 …
Publication date: 
1 Jan 2019

Stefano Cecchi, Daniele Dragoni, Dominik Kriegner, Elisa Tisbi, Eugenio Zallo, Fabrizio Arciprete, Václav Holý, Marco Bernasconi, Raffaella Calarco

Biblio References: 
Volume: 29 Issue: 2 Pages: 1805184
Advanced functional materials