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We report on the conditions necessary for the electrical injection of spin-polarized electrons into indium nitride nanowires synthesized from the bottom up by molecular beam epitaxy. The presented results mark the first unequivocal evidence of spin injection into III-V semiconductor nanowires. Utilizing a newly developed preparation scheme, we are able to surmount shadowing effects during the metal deposition. Thus, we avoid strong local anisotropies that arise if the ferromagnetic leads are wrapping around the nanowire. Using a combination of various complementary techniques, inter alia the local Hall effect, we carried out a comprehensive investigation of the coercive fields and switching behaviors of the cobalt micromagnetic spin probes. This enables the identification of a range of aspect ratios in which the mechanism of magnetization reversal is single domain switching. Lateral nanowire spin valves were …
American Chemical Society
Publication date: 
12 Sep 2012

Sebastian Heedt, C Morgan, K Weis, DE Burgler, R Calarco, H Hardtdegen, D Grutzmacher, Th Schapers

Biblio References: 
Volume: 12 Issue: 9 Pages: 4437-4443
Nano letters