Surfaces of GaN films have been investigated by Atomic Force Microscopy (AFM) with implemented Piezoelectric Force Microscopy (PFM) technique. The GaN layers were grown by molecular beam epitaxy (MBE) on Si(111) substrates with an AlN buffer layer. Simultaneous imaging of surface morphology in the AFM and PFM response was performed. The PFM imaging is sensitively dependent on measurement conditions. By increasing the ac voltage the contrast of the PFM images is increased. Using the Voltage‐Modulated Force Microscopy (VMFM) regime, with the frequency close to the first resonant frequency of the piezoelectric signal, PFM images with high contrast and high resolution on the nanometer scale were obtained. Regions of opposite piezoresponse were observed and explained by the presence of inversion domains. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)