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A single phase InN epitaxial film is grown on a bulk In2O3(111) wafer by plasma-assisted molecular beam epitaxy. The InN/In2O3 orientation relationship is found to be (0001) ‖ (111) and [11¯00] ‖ [112¯]. High quality of the layer is confirmed by the small widths of the x-ray rocking curves, the sharp interfaces revealed by transmission electron microscopy, the narrow spectral width of the Raman E2h vibrational mode, and the position of the photoluminescence band close to the fundamental band gap of InN.
American Institute of Physics
Publication date: 
22 Oct 2012

Sergey Sadofev, YongJin Cho, Oliver Brandt, Manfred Ramsteiner, Raffaella Calarco, Henning Riechert, Steven C Erwin, Zbigniew Galazka, Maxym Korytov, Martin Albrecht, Reinhard Uecker, Roberto Fornari

Biblio References: 
Volume: 101 Issue: 17 Pages: 172102
Applied Physics Letters