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The electric and nonvolatile control of the spin texture in semiconductors would represent a fundamental step toward novel electronic devices combining memory and computing functionalities. Recently, GeTe has been theoretically proposed as the father compound of a new class of materials, namely ferroelectric Rashba semiconductors. They display bulk bands with giant Rashba-like splitting due to the inversion symmetry breaking arising from the ferroelectric polarization, thus allowing for the ferroelectric control of the spin. Here, we provide the experimental demonstration of the correlation between ferroelectricity and spin texture. A surface-engineering strategy is used to set two opposite predefined uniform ferroelectric polarizations, inward and outward, as monitored by piezoresponse force microscopy. Spin and angular resolved photoemission experiments show that these GeTe(111) surfaces display opposite …
American Chemical Society
Publication date: 
30 Jan 2018

Christian Rinaldi, Sara Varotto, Marco Asa, Jagoda Sławińska, Jun Fujii, Giovanni Vinai, Stefano Cecchi, Domenico Di Sante, Raffaella Calarco, Ivana Vobornik, Giancarlo Panaccione, Silvia Picozzi, Riccardo Bertacco

Biblio References: 
Volume: 18 Issue: 5 Pages: 2751-2758
Nano letters