-A A +A
A single phase InN epitaxial film is grown on a bulk In{sub 2}O{sub 3}(111) wafer by plasma-assisted molecular beam epitaxy. The InN/In{sub 2}O{sub 3} orientation relationship is found to be (0001) parallel (111) and [1100] parallel [112]. High quality of the layer is confirmed by the small widths of the x-ray rocking curves, the sharp interfaces revealed by transmission electron microscopy, the narrow spectral width of the Raman E{sub 2}{sup h} vibrational mode, and the position of the photoluminescence band close to the fundamental band gap of InN.
Publication date: 
22 Oct 2012

Sergey Sadofev, Yong Jin Cho, Oliver Brandt, Manfred Ramsteiner, Raffaella Calarco, Henning Riechert, Steven C Erwin, Zbigniew Galazka, Maxym Korytov, Martin Albrecht, Reinhard Uecker, Roberto Fornari

Biblio References: 
Volume: 101 Issue: 17
Applied Physics Letters