The GaN nanocolumns were grown by plasma‐assisted molecular beam epitaxy (PAMBE) on Si(111) substrates. Scanning electron microscopy shows that the nanocolumns with diameters of 20–150 nm and lengths of 300‐500 nm grow parallel to the [111] direction of the Si substrate. The vibrational spectrum (including optical and interface phonons) of the nanocolumns was studied using conventional and surface enhanced Raman scattering. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)