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We study the isolated contribution of hole localization for well-known charge carrier recombination properties observed in conventional, polar InGaN quantum wells (QWs). This involves the interplay of charge carrier localization and non-radiative transitions, a non-exponential decay of the emission and a specific temperature dependence of the emission, denoted as “s-shape”. We investigate two dimensional In 0.25 Ga 0.75 N QWs of single monolayer (ML) thickness, stacked in a superlattice with GaN barriers of 6, 12, 25 and 50 MLs. Our results are based on scanning and high-resolution transmission electron microscopy (STEM and HR-TEM), continuous-wave (CW) and time-resolved photoluminescence (TRPL) measurements as well as density functional theory (DFT) calculations. We show that the recombination processes in our structures are not affected by polarization fields and electron localization …
Nature Publishing Group
Publication date: 
21 Jun 2019

Mariia Anikeeva, M Albrecht, Felix Mahler, Jens Wolfgang Tomm, Liverios Lymperakis, Caroline Chèze, Raffaella Calarco, Jörg Neugebauer, Tobias Schulz

Biblio References: 
Volume: 9 Issue: 1 Pages: 1-10
Scientific reports