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Type: 
Journal
Description: 
Interfacial phase change memory devices based on a distinct nanoscale structure called superlattice have been shown to outperform conventional phase-change devices. This improvement has been attributed to the hetero-interfaces, which play an important role for the superior device characteristics. However, the impact of grain boundaries (GBs), usually present in large amounts in a standard sputter-deposited superlattice film, on the device performance has not yet been investigated.
Publisher: 
IOP Publishing
Publication date: 
21 Mar 2019
Authors: 

Oana Cojocaru-Mirédin, Henning Hollermann, Antonio M Mio, Anthony Yu-Tung Wang, Matthias Wuttig

Biblio References: 
Volume: 31 Issue: 20 Pages: 204002
Origin: 
Journal of Physics: Condensed Matter