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Chemical doping of bulk black phosphorus is a well-recognized way to reduce surface oxidation and degradation. Here, we report on the fabrication of terahertz frequency detectors consisting of an antenna-coupled field-effect transistor (FET) with an active channel of Se-doped black phosphorus. Our devices show a maximum room-temperature hole mobility of 1780 cm2 V−1 s−1 in a SiO2-encapsulated FET. A room-temperature responsivity of 3 V W−1 was observed, with a noise-equivalent power of 7 nW Hz−1/2 at 3.4 THz, comparable with the state-of-the-art room-temperature photodetectors operating in the same frequency range. The inclusion of Se dopants in the growth process of black phosphorus crystals enables the optimization of the transport and optical performances of FETs in the far-infrared with a high potential for the development of BP-based electro-optical devices. We also demonstrate that the …
Royal Society of Chemistry
Publication date: 
1 Jan 2019

Leonardo Viti, Antonio Politano, Kai Zhang, Miriam Serena Vitiello

Biblio References: 
Volume: 11 Issue: 4 Pages: 1995-2002