Photodetectors exploiting photoejected hot electrons have the potential to achieve ultrahigh sensitivity and broadband detection capabilities, which are controlled by the structure of the device rather than the bandgap of the employed materials. However, the achievement of photodetectors of long‐wavelength photons with both high responsivity and bandwidth is still challenging. Here, a novel class of high‐gain photodetectors based on the manipulation of intrinsic hot carriers by exploiting the electromagnetic engineering of a graphene‐based active channel is presented. Light field is focused in a split‐finger gated structure to create a potential gradient in the channel, which is able to trap and detrap the charges laterally transferred from low resistive Au–graphene interface, finally leading to a high photoconductive gain. Correspondingly, the device activity can be easily switched from photovoltaic to photoconductive …