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In the last decades Silicon Carbide (SiC) received special attentions, in particular as semiconductor material, because is considered as alternative to Silicon for the future high-power, low consumption, radiation-hard microelectronics devices. This ambitious goal is particularly interesting also for the physics of the detectors. In this work are discussed some of the recent results obtained by SiCILIA collaboration, a joint research activity between INFN and IMM institutions to increase the level of technological development in the field of SiC detectors.
IOP Publishing
Publication date: 
1 Jun 2020

F La Via, S Tudisco, C Altana, M Boscardin, C Ciampi, GAP Cirrone, A Fazzi, D Giove, G Gorini, G Lanzalone, A Muoio, G Pasquali, G Petringa, SMR Puglia, M Rebai, A Santangelo, A Trifirò, SiCILIA Collaboration

Biblio References: 
Volume: 1561 Issue: 1 Pages: 012013
Journal of Physics: Conference Series