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Out-of-plane Ga2Se3 nanowires are grown by molecular beam epitaxy via Au-assisted heterovalent exchange reaction on GaAs substrates in the absence of Ga deposition. It is shown that at a suitable temperature around 560 °C the Au-decorated GaAs substrate releases Ga atoms, which react with the incoming Se and feed the nanowire growth. The nanowire composition, crystal structure, and morphology are characterized by Raman spectroscopy and electron microscopy. The growth mechanism is investigated by X-ray photoelectron spectroscopy. We explore the growth parameter window and find an interesting effect of shortening of the nanowires after a certain maximum length. The nanowire growth is described within a diffusion transport model, which explains the nonmonotonic behavior of the nanowire length versus the growth parameters. Nanowire shortening is explained by the blocking of Ga supply …
American Chemical Society
Publication date: 
20 Jul 2020

Federico Berto, Niloofar Haghighian, Katja Ferfolja, Sandra Gardonio, Mattia Fanetti, Faustino Martelli, Valentina Mussi, Vladimir G Dubrovskii, Igor V Shtrom, Alfonso Franciosi, Silvia Rubini

Biblio References: 
Volume: 124 Issue: 32 Pages: 17783-17794
The Journal of Physical Chemistry C