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Ion Implanted Phosphorous for 4H-SiC VDMOSFETs Source Regions: Effect of the Post Implantation Annealing Time

Type: 
Journal
Description: 
Publisher: 
Trans Tech Publications Ltd
Publication date: 
28 Aug 2020
Authors: 

Roberta Nipoti, Antonella Parisini, Virginia Boldrini, Salvatore Vantaggio, Marco Gorni, Mariaconcetta Canino, Giulio Pizzochero, Massimo Camarda, Judith Woerle, Ulrike Grossner

Biblio References: 
Volume: 1004 Pages: 698-704
Origin: 
Materials Science Forum
Link: 
https://scholar.google.it/citations?view_op=view_citation&hl=en&citation_for_vie…

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