Memristive systems represent today a disruptive technology for the semiconductor industry with high potential for a wide range of applications ranging from non-volatile memories and non-volatile logic, to analog circuits, biomimetic devices, and neuromorphic computing paradigms. Among the general class of memristive systems, our work focus on oxide filamentary resistive random access memories (oxide RRAM) that base their operation on redox reactions and electrochemical phenomena that allow the formation and dissolution of conductive filaments, shorting the two electrodes of a metal/oxide/metal stack [1]. RRAMs have already demonstrated their great potential for non-volatile memory applications because of low power consumption, fast switching times, scalability down to nm scale [2] or atomic level, and CMOS compatibility. In parallel, significant efforts to redirect the device engineering towards …