Type:
Conference
Description:
This paper presents the results of the electrical characterization of a silicon Low Voltage Trench Gate charged-coupled Power MOSFET under external uniaxial mechanical stress. The stress was imposed by a 3 Point Bending system during electrical measurement of the oxide leakage current.
Publisher:
IEEE
Publication date:
1 Sep 2020
Biblio References:
Volume: 1 Pages: 365-370
Origin:
2020 2nd IEEE International Conference on Industrial Electronics for Sustainable Energy Systems (IESES)