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Group IV semiconductor nanowires have been investigated experimentally and theoretically for several years. Their intriguing and yet not fully understood properties and the potential for applications in nanoelectronics, spintronics, energy harvesting, production and storage, sensors, and neuroelectronics motivate this research effort. Due to the high surface area SiNWs and GeNWs represent also a perfect material science lab to investigate with high accuracy specific issues related to defects and interfaces. The investigation of defects at the interface between silicon and silicon oxide becomes very important when the SiNW diameter reduces below 10-20 nm and the surface-to-volume ratio increases [1, 2]. In the present work we focus on the investigation of the doping of silicon nanowires addressing the role of hydrogen, as well as other passivating species, and Pb defects at the Si/SiO2 interface [3-5] in the donor …
IOP Publishing
Publication date: 
25 Aug 2016
Biblio References: 
Volume: 75 Issue: 4 Pages: 179
ECS Transactions