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Type: 
Conference
Description: 
In the context of reliability of silicon Power Devices, we conducted a study on Power MOS Gate Trench devices. The stress tensor inside the device is characterized through experimental analysis and Finite Element calculation. A test bench is developed to investigate the impact of mechanical stress on the gate leakage current of examined devices.
Publisher: 
VDE
Publication date: 
7 Jul 2020
Authors: 

Lorenzo Maurizio Selgi, Antonella Sciuto, Michele Calabretta, Alessandro Sitta, Giuseppe D'Arrigo

Biblio References: 
Pages: 1-7
Origin: 
PCIM Europe digital days 2020; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management