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Nanostructures such as semiconductor nanowires have an increasing interest as possible candidates for novel beyond-CMOS nanodevice concepts. This is strongly motivated by their already proved high versatility and practical applications. Nevertheless of these promising achievements, there are still great challenges concerning fundamental questions of physics in those nanoscaling devices. Properties like the doping and resulting electrical transport are an important field of research. We report the growth of GaN nanowires by plasma-assisted molecular beam epitaxy on Si(111) substrate. These nanowires vary in density and diameter from 20 to300 nm. For the electrical characterisation the nanowires GaN have then be transferred to a Si(100) substrate covered with a layer of SiO{sub 2}. Single nanowire devices have been fabricated by e-beam patterning technique. The electrical transport properties of the resulting metal-semiconductor-metal nanostructures are analyzed by means of current-voltage measurements. The transport in nanowires is extremely sensitive to the wire diameter due to the size dependent recombination barrier. This effect is used to determine doping level and mobility of the nanowires and to confirm our previously developed surface recombination model for GaN nanowires.
Publication date: 
1 Jul 2008

Thomas Richter, Michel Marso, Ralph Meijers, Raffaella Calarco, Detlev Gruetzmacher, Hans Lueth

Biblio References: 
Volume: 43
Verhandlungen der Deutschen Physikalischen Gesellschaft