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The electrothermal behavior of gallium nitride (GaN) HEMTs has been simulated by using a hybrid approach in which the problem is solved by coupling together an effective model (for the electrical part) and a 3-D finite element model (for the thermal part). The effective model relies on the estimation of the channel current at different temperatures in the absence of thermal gradients. This regime occurs in real devices only during the very initial stage of bias pulses, when self-heating effects are not yet developed, for time intervals shorter than 1 ns. Virtual output electrical characteristic, in which self-heating effects are negligible, have been derived from pulsed measurements of the electrical output characteristics and electrothermal transient simulations. The maximum temperature because of self-heating evaluated by using the virtual output characteristic are substantially higher than those obtained using the short …
Publication date: 
10 Jun 2021

Antonio Valletta, Valentina Mussi, Matteo Rapisarda, Andrea Lucibello, Marco Natali, Marco Peroni, Claudio Lanzieri, Guglielmo Fortunato, Luigi Mariucci

Biblio References: 
IEEE Transactions on Electron Devices