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Type: 
Journal
Description: 
In this paper, a two-dimensional (2D) planar scanning capacitance microscopy (SCM) method is used to visualize with a high spatial resolution the channel region of large-area 4H-SiC power MOSFETs and estimate the homogeneity of the channel length over the whole device perimeter. The method enabled visualizing the fluctuations of the channel geometry occurring under different processing conditions. Moreover, the impact of the ion implantation parameters on the channel could be elucidated. View Full-Text
Publisher: 
Multidisciplinary Digital Publishing Institute
Publication date: 
1 Jun 2021
Authors: 

Patrick Fiorenza, Mario S Alessandrino, Beatrice Carbone, Alfio Russo, Fabrizio Roccaforte, Filippo Giannazzo

Biblio References: 
Volume: 11 Issue: 6 Pages: 1626
Origin: 
Nanomaterials