In this paper we report the morphology and the microstructural properties of thick [111]-oriented 3C-SiC films epitaxially grown on T-shaped Si micropillars. This compliant substrate is designed to release the stress developed in 3C-SiC grown on Si, due to the lattice mismatch and the different thermal expansion coefficients between 3C-SiC and Si. In this way it was possible to have 3C-SiC films as thick as 10 and 16 µm, with small bowing and no cracks. Our study relies on the use of an Electron Microscopy approach and elucidates the structure of the crystallographic defects across the 3C-SiC film, such as stacking faults (SFs), nano-twins and grain boundaries (GBs). After examination of the morphological and structural characteristics of the Si micropillar array, we analyzed the crystallographic properties of the thin 3C-SiC deposit on the Si micropillar sidewalls, since it may have an impact on the upper film. To …