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Since the 1980s, the generation and detection of spin currents has relied on ferromagnets. Their switching today relies on spin-orbit torque from heavy metals. Nevertheless, spin injection in semiconductors has rather low efficiency. Ferroelectric Rashba semiconductors (FERSC) [1,2] may constitute a new paradigm for semiconductor spintronics, thanks to the combination of semiconductivity, large spin-orbit interaction, and the non-volatility provided by ferroelectricity. Here we report the room-temperature ferroelectric switching of spin-to-charge conversion in epitaxial GeTe films. We first show that ferroelectricity in GeTe can be reversed by electrical gating despite its high carrier density. Then, we reveal a spin-to-charge conversion as effective as in Pt, but whose sign switches with the ferroelectric polarization. These results open a route towards devices combining spin-logic and memory integrated into a silicon …
International Society for Optics and Photonics
Publication date: 
1 Aug 2021

Sara Varotto, Luca Nessi, Stefano Cecchi, Jagoda Slawinska, Paul Noël, Federico Fagiani, Matteo Cantoni, Marcio Costa, Raffaella Calarco, Marco Buongiorno Nardelli, Manuel Bibes, Silvia Picozzi, Jean-Philippe Attané, Laurent Vila, Riccardo Bertacco, Christian C Rinaldi

Biblio References: 
Volume: 11805 Pages: 118052A
Spintronics XIV