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In this paper, we investigate the electrical evolution of tungsten (W) and tungsten carbide (WC) Schottky contacts on 4H-SiC subjected to thermal treatments at different annealing temperatures from 475 C to 700 C. For each annealing temperature, the uniformity of the Schottky barrier height (Φ B) and ideality factor (n) was monitored by current–voltage (I–V) measurements in forward bias, performed over sets of equivalent diodes. Good values of n (below 1.05) were found for both contacts up to thermal annealing at 700 C. On the other hand, the barrier of the two contacts behaves differently. For the W/4H-SiC diode, the Φ B increases with the annealing temperature (from 1.14 eV at 475 C to 1.25 eV at 700 C), whereas the Schottky barrier in WC/4H-SiC features a slight reduction already with thermal annealing at 475 C, remaining almost constant at around 1.06 eV up to annealing at 700 C. A deeper characterization …
IOP Publishing
Publication date: 
10 Dec 2021

Marilena Vivona, Gabriele Bellocchi, Raffaella Lo Nigro, Simone Rascunà, Fabrizio Roccaforte

Biblio References: 
Volume: 37 Issue: 1 Pages: 015012
Semiconductor Science and Technology