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We explore an alternative way to fabricate (In, Ga) N/GaN short-period superlattices on GaN (0001) by plasma-assisted molecular beam epitaxy. We exploit the existence of an In adsorbate structure manifesting itself by a (&surd;{3}× &surd;{3}) R 30 surface reconstruction observed in-situ by reflection high-energy electron diffraction. This In adlayer accommodates a maximum of 1/3 monolayer of In on the GaN surface and, under suitable conditions, can be embedded into GaN to form an In 0.33 Ga 0.67 N quantum sheet whose width is naturally limited to a single monolayer. Periodically inserting these quantum sheets, we synthesize (In, Ga) N/GaN short-period superlattices with abrupt interfaces and high periodicity as demonstrated by x-ray diffractometry and scanning transmission electron microscopy. The embedded quantum sheets are found to consist of single monolayers with an In content of 0.25-0.29. For a …
Publication date: 
1 Feb 2017

C Cheze, F Feix, M Anikeeva, T Schulz, M Albrecht, H Riechert, O Brandt, R Calarco

Biblio References: 
Volume: 110 Issue: 7
Applied Physics Letters