In this work, we show the synthesis and doping of TiO2 films by pulsed laser deposition (PLD) and low-energy ion implantation techniques, respectively. The peculiarity of this work consists that both the processes have been performed with the same apparatus. It consists of a laser ion source in which the plasma plume can expand in free mode or under accelerating DC voltages. We show preliminary results on the characterization of titania films deposited starting from a rutile target and then doped with Cu and Ni ions, accelerated at 20 kV. Such a low implantation energy was a suitable choice to have an implantation effect up to several nanometres in depth.