Originally introduced in electronic manufacturing to replace the SiO2 insulating layer, metal oxides are now extensively used in a multitude of electronic devices. Understanding charge transport mechanisms in metal oxides is of paramount importance for device optimization; however, a detailed and self-consistent discussion of electron conduction at all applied electric fields is lacking in the literature. In this work, we investigated the conduction mechanisms in three model systems, Al2O3, HfO2, and Al-doped HfO2 metal–insulator–metal capacitors, determining the path that the electrons travel within the metal oxide. Traps properties are extracted from experimental current–voltage characteristics using the Ginestra® simulation software. Furthermore, the analysis allowed to visualize the location of traps most involved in the conduction and the dominant transport mechanisms at each applied electric field. Despite the …