Type:
Journal
Description:
We present a new approach to the fabrication of fully relaxed Ge1-ySny layers on Ge with Sn concentration y up to 13 at. % The incorporation of Sn in Ge was obtained by sputtering of thin Sn films (
Publisher:
North-Holland
Publication date:
1 Mar 2023
Biblio References:
Volume: 612 Pages: 155817
Origin:
Applied Surface Science